歡迎來(lái)到泰州巨納新能源有限公司網(wǎng)站！歡迎來(lái)到泰州巨納新能源有限公司網(wǎng)站！
13651969369
當(dāng)前位置：首頁(yè) > 產(chǎn)品中心 > 二維材料 > 硒化物晶體 > SnSe 硒化錫晶體 (Tin Selenide)
簡(jiǎn)要描述：In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers.
更新時(shí)間：2024-06-03產(chǎn)品型號(hào)： 廠商性質(zhì)：生產(chǎn)廠家訪 問(wèn) 量：948詳細(xì)介紹
In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency.
SnSe single crystal characteristics
產(chǎn)品咨詢
聯(lián)系人：陳谷一
地址：江蘇省泰州市鳳凰西路168號(hào)
郵箱：taizhou@sunano.com.cn
電話：021-56830191掃一掃以下二維碼了解更多信息
銷(xiāo)售微信咨詢
網(wǎng)站二維碼